Image-capturing unit and image-capturing apparatus

ABSTRACT

An image-capturing unit includes; an image-capturing chip; a power supply circuit unit that outputs electrical power to be fed to the image-capturing chip; a power supply line that feeds electrical power from the power supply circuit unit to the image-capturing chip; a disconnecting unit that is provided to the power supply line and is electrically disconnecting the power supply circuit unit and the image-capturing chip when a leakage current of the image-capturing chip is measured; and an implementation substrate on which the power supply circuit unit, the image-capturing chip, the power supply line and the disconnecting unit are implemented.

The contents of the following Japanese patent application and PCTapplication are incorporated herein by reference:

-   NO. 2013-272439 filed on Dec. 27, 2013, and-   NO. PCT/JP2014/084581 filed on Dec. 26, 2014.

BACKGROUND

1. Technical Field

The present invention relates to an image-capturing unit and animage-capturing apparatus.

2. Related Art

An image-capturing unit with a package structure in which animage-capturing chip is implemented within a ceramic package has beenknown.

PRIOR ART DOCUMENTS Patent Documents

[Patent Document 1] Japanese Patent Application Publication No.2007-019423

There has been an issue that a leakage current of an image-capturingchip cannot be measured highly precisely in a state where theimage-capturing chip is implemented on an implementation substrate.

SUMMARY

According to a first aspect, an image-capturing unit comprises animage-capturing chip that captures an image of a subject

The image-capturing unit may comprise an implementation substrate onwhich the image-capturing chip is implemented. The image-capturing unitmay comprise an electronic component that is provided to theimplementation substrate, and is for driving the image-capturing chip.The image-capturing unit may comprise a wiring that connects theelectronic component and the image-capturing chip. The image-capturingunit may comprise an adjusting unit that is provided to the wiring, andadjusts an electrical current flowing from the electronic component tothe image-capturing chip so that the electrical current becomes smallerwhen a leakage current of the image-capturing chip is being measured, ascompared with when a leakage current of the image-capturing chip is notbeing measured.

The image-capturing chip may be arranged in a space formed by; a firstsurface of the implementation substrate; a frame that is arranged on thefirst surface, and surrounds at least a portion of the image-capturingchip; and a light-transmissive substrate arranged to face theimage-capturing chip. The adjusting unit may be provided to a secondsurface that is opposite to the first surface in the implementationsubstrate.

The image-capturing unit may further comprise a first electrode that isconnected to the wiring, and is to be used when a leakage current of theimage-capturing chip is being measured. In the wiring, the adjustingunit is provided on the electronic component side relative to the firstelectrode.

The image-capturing unit may further comprise a resistor that isprovided to the wiring, and is arranged to be connected in parallel withthe adjusting unit. The image-capturing unit may further comprise asecond electrode that is connected to the wiring, and is to be used whena leakage current of the image-capturing chip is being measured. Thefirst electrode may be electrically connected to a first end portion ofthe resistor. The second electrode may be electrically connected to asecond end portion of the resistor.

The adjusting unit may make higher an electrical resistance between theelectronic component and the image-capturing chip when a leakage currentof the image-capturing chip is being measured, as compared with when aleakage current of the image-capturing chip is not being measured.

The electronic component may have a power supply circuit unit thatoutputs an electrical power to be fed to the image-capturing chip.

The electronic component may have a voltage variation suppressioncircuit that suppresses temporal variation in voltage output by thepower supply circuit unit.

The electronic component may have a discharge circuit that dischargeselectrical charges accumulated in the image-capturing chip.

According to a second aspect, an image-capturing apparatus may compriseany of the above-mentioned image-capturing units.

According to a third aspect, an image-capturing unit may comprise animage-capturing chip that captures an image of a subject. Theimage-capturing unit may comprise an implementation substrate on whichthe image-capturing chip is implemented. The image-capturing unit maycomprise a power supply circuit unit that is provided to theimplementation substrate, and outputs an electrical power to be fed tothe image-capturing chip. The image-capturing unit may comprise a feedline that feeds the electrical power from the power supply circuit unitto the image-capturing chip. The image-capturing unit may comprise arestricting unit that is provided to the feed line, and restricts anelectrical current flowing from the power supply circuit unit to theimage-capturing chip when a leakage current of the image-capturing chipis measured.

The image-capturing chip may be arranged in a space formed by: a firstsurface of the implementation substrate; a frame that is arranged on thefirst surface, and surrounds at least a portion of the image-capturingchip; and a light-transmissive substrate arranged to face theimage-capturing chip. The restricting unit may be provided to a secondsurface that is opposite to the first surface in the implementationsubstrate.

The image-capturing unit may further comprise a first electrode that isconnected to a wiring connecting an electronic component for driving theimage-capturing chip and the image-capturing chip, and is to be usedwhen a leakage current of the image-capturing chip is being measured. Inthe wiring, the restricting unit may be provided on the electroniccomponent side relative to the first electrode.

The image-capturing unit may further comprise a resistor that isprovided to the wiring, and is arranged to be connected in parallel withthe restricting unit. The image-capturing unit may further comprise asecond electrode that is connected to the wiring, and is to be used whena leakage current of the image-capturing chip is being measured. Thefirst electrode may be electrically connected to a first end portion ofthe resistor. The second electrode may be electrically connected to asecond end portion of the resistor.

The restricting unit may make higher an electrical resistance between anelectronic component for driving the image-capturing chip and theimage-capturing chip when a leakage current of the image-capturing chipis being measured, as compared with when a leakage current of theimage-capturing chip is not being measured.

The image-capturing unit may further comprise an electronic componentfor driving the image-capturing chip. The electronic component may havea power supply circuit unit that outputs an electrical power to be fedto the image-capturing chip.

The electronic component may have a voltage variation suppressioncircuit that suppresses temporal variation in voltage output by thepower supply circuit unit.

The electronic component may have a discharge circuit that dischargeselectrical charges accumulated in the image-capturing chip.

According to a fourth aspect, an image-capturing apparatus may compriseany of the above-mentioned image-capturing units.

According to a fifth aspect, a substrate may comprise an electroniccomponent for driving an image-capturing chip. The substrate maycomprise a wiring that connects the electronic component and theimage-capturing chip. The substrate may comprise an adjusting unit thatis provided to the wiring, and adjusts an electrical current flowingfrom the electronic component to the image-capturing chip so thatelectrical current becomes smaller when a leakage current of theimage-capturing chip is being measured, as compared with when a leakagecurrent of the image-capturing chip is not being measured.

The substrate may have a first surface on which the image-capturing chipis implemented. The substrate may have a second surface that is oppositeto the first surface, wherein

The adjusting unit may be provided to the second surface.

According to a sixth aspect, a substrate may comprise an electroniccomponent for driving an image-capturing chip. The substrate maycomprise a wiring that connects the electronic component and theimage-capturing chip. The substrate may comprise a restricting unit thatis provided to the wiring, and restricts an electrical current flowingfrom the electronic component to the image-capturing chip when a leakagecurrent of the image-capturing chip is being measured.

The substrate may have a first surface on which the image-capturing chipis implemented. The substrate may have a second surface that is oppositeto the first surface. The restricting unit may be provided to the secondsurface.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of a camera 10 which is one exampleof an image-capturing apparatus.

FIG. 2 is a top surface view schematically showing an image-capturingunit 40.

FIG. 3 is a cross-sectional view schematically showing a cross-sectiontaken through A-A in FIG. 2.

FIG. 4 is a circuit diagram schematically showing an electrical powersupply circuit 490 in a first implementation example.

FIG. 5 schematically shows a leakage current measuring system 590.

FIG. 6 is a circuit diagram schematically showing an electrical powersupply circuit 690 in a second implementation example.

FIG. 7 schematically shows a leakage current measuring system 790.

FIG. 8 is a circuit diagram schematically showing an electrical powersupply circuit 890 in a third implementation example.

FIG. 9A schematically shows an implementation example of a connectionland 841 and a connection land 842.

FIG. 9B schematically shows an implementation example of the connectionland 841 and the connection land 842.

FIG. 10A schematically shows another implementation example of theconnection land 841 and the connection land 842.

FIG. 10B schematically shows another implementation example of theconnection land 841 and the connection land 842.

FIG. 11 schematically shows a leakage current measuring system 1190according to the third implementation example.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, (some) embodiment(s) of the present invention will bedescribed. The embodiment(s) do(es) not limit the invention according tothe claims, and all the combinations of the features described in theembodiment(s) are not necessarily essential to means provided by aspectsof the invention.

FIG. 1 is a schematic sectional view of a camera 10 which is one exampleof an image-capturing apparatus. The camera 10 comprises a lens unit 20and a camera body 30. The lens unit 20 is fit to the camera body 30. Thelens unit 20 comprises, inside its lens-barrel, an optical systemarrayed along an optical axis 22, and guides an incident subject lightflux to an image-capturing unit 40 of the camera body 30.

In the present embodiment, the direction along the optical axis 22 isdefined as the z-axis direction. That is, the direction in which asubject light flux is incident on an image-capturing chip 100 that theimage-capturing unit 40 has is defined as the z-axis direction.Specifically, the direction in which a subject light flux is incident isdefined as the negative z-axis direction, and the opposite direction isdefined as the positive z-axis direction. The longitudinal direction ofthe image-capturing chip 100 is defined as the x-axis direction. Theshort direction of the image-capturing chip 100 is defined as the y-axisdirection. Specifically, the x-axis direction and the y-axis directionare defined as directions illustrated in FIG. 1. The x-axis, y-axis andz-axis form a right-handed, rectangular coordinate system. Note that forconvenience of explanation, the positive z-axis direction may besometimes called “forward,” “front,” etc. Also, the negative z-axisdirection may be sometimes called “backward,” “rear,” etc. The side inthe negative z-axis direction may be sometimes called a back side, etc.

The camera body 30 has a mirror unit 31 at a position in the negativez-axis direction past a body mount 26 coupled with a lens mount 24. Themirror unit 31 includes a main mirror 32 and a sub mirror 33. The mainmirror 32 is pivotably supported rotatably between a penetrationposition at which it penetrates the optical path of a subject light fluxemitted by the lens unit 20, and an evacuation position at which itevacuates from the optical path of the subject light flux. The submirror 33 is pivotably supported rotatably relative to the main mirror32. The sub mirror 33 penetrates into the penetration position togetherwith the main mirror 32, and evacuates to the evacuation positiontogether with the main mirror 32. In this manner, the mirror unit 31 isin a penetrated state in which it has penetrated the optical path of asubject light flux and an evacuation state in which it has evacuatedfrom the subject light flux.

When the mirror unit 31 is in a penetrated state, a portion of a subjectlight flux having being incident on the main mirror 32 is guided to afocus plate 80 by being reflected on the main mirror 32. The focus plate80 is disposed at a conjugate position of the image-capturing surface ofthe image-capturing chip 100 that the image-capturing unit 40 has, andvisualizes a subject image formed by the optical system of the lens unit20. The subject image formed on the focus plate 80 is observed through afinder window 86 via a pentaprism 82 and a finder optical system 84 tobe.

When the mirror unit 31 is in the penetrated state, a light flux otherthan a subject light flux reflected on the main mirror 32 of the subjectlight flux having been incident on the main mirror 32 is incident on thesub mirror 33. Specifically, the main mirror 32 has a half-mirrorregion, and a subject light flux having been transmitted through thehalf-mirror region of the main mirror 32 is incident on the sub mirror33. The sub mirror 33 reflects a light flux having been incident fromthe half-mirror region toward an imaging optical system 70. The imagingoptical system 70 guides the incident light flux to a focus detectionsensor 72 for detecting a focus position. The focus detection sensor 72outputs a detection result about the focus position to an MPU 51.

The focus plate 80, the pentaprism 82, the main mirror 32, the submirror 33 and the finder optical system 84 are supported by a mirror box60 as a support member. When the mirror unit 31 is in an evacuationstate and a front curtain and a rear curtain of a shutter unit 38 areopen, a subject light flux transmitted through the lens unit 20 reachesthe image-capturing surface of the image-capturing chip 100.

A substrate 62 and a display unit 88 are sequentially arranged atpositions in the negative z-axis direction from the image-capturing unit40. A liquid crystal panel or the like can be used as the display unit88, for example. The display surface of the display unit 88 appears onthe rear side of the camera body 30. The display unit 88 displays animage generated based on output signals from the image-capturing chip100.

Electronic circuits such as the MPU 51 or an ASIC 52 are implemented onthe substrate 62. The MPU 51 performs the overall control of the camera10. Output signals from the image-capturing chip 100 are output to theASIC 52 via a flexible printed substrate or the like. The ASIC 52processes output signals output from the image-capturing chip 100.

The ASIC 52 generates image data for display based on output signalsfrom the image-capturing chip 100. The display unit 88 displays an imagebased on the image data for display generated by the ASIC 52. The ASIC52 generates image data for recording based on output signals from theimage-capturing chip 100. The ASIC 52 generates the image data forrecording by performing, for example, an image process or a compressionprocess on output signals from the image-capturing chip. The image datafor recording generated by the ASIC 52 is recorded in a recording mediumfit to the camera body 30. The recording medium is configured to beattachable to and detachable from the camera body 30.

FIG. 2 is a top surface view schematically showing the image-capturingunit 40.

FIG. 3 is a cross-sectional view schematically showing a cross-sectiontaken through A-A in FIG. 2. The image-capturing unit 40 is configuredto include the image-capturing chip 100, an implementation substrate120, a frame 140 and a cover glass 160.

The image-capturing chip 100 is a CMOS image sensor or a CCD imagesensor. The image-capturing chip 100 is configured to include animage-capturing region 101 and a peripheral region 102. Theimage-capturing region 101 is formed at a central portion of theimage-capturing chip 100. In the image-capturing region 101 of theimage-capturing chip 100, an image-capturing surface is formed with aplurality of photoelectric converting elements that performphotoelectric conversion on subject light. The peripheral region 102 ofthe image-capturing chip 100 is positioned in the periphery of theimage-capturing region 101. The peripheral region 102 of theimage-capturing chip 100 has a processing circuit that reads out pixelsignals obtained by photoelectric conversion in the photoelectricconverting elements, and performs signal processing on the pixelsignals. The processing circuit includes an AD conversion circuit thatconverts output pixel signals into digital signals.

The image-capturing chip 100 is implemented on the implementationsubstrate 120. The image-capturing chip 100 is implemented for exampleby flip-chip on the implementation substrate 120. The image-capturingchip 100 is electrically connected with the implementation substrate 120via bonding wires 110. The pixel signals obtained by conversion intodigital signals by the AD conversion circuit of the image-capturing chip100 are output to the implementation substrate 120 via the bonding wires110. The image-capturing chip 100 adhere to the implementation substrate120 through an adhesive. The image-capturing chip 100 is housed in anopening portion 138 of the frame 140. The frame 140 is one example of asurrounding member that surrounds the image-capturing chip 100.

The implementation substrate 120 is where the image-capturing chip 100is implemented. The implementation substrate 120 includes a first layer121, a core layer 207 and a second layer 122. The first layer 121includes a solder resist layer 201, a wiring layer 202, an insulationlayer 203, a wiring layer 204 and an insulation layer 205. The secondlayer 122 includes an insulation layer 215, a wiring layer 214, aninsulation layer 213, a wiring layer 212 and a solder resist layer 211.The implementation substrate 120 is a multilayer core substrate that hasthe core layer 207 as its core layer.

In the implementation substrate 120, the image-capturing chip 100, thesolder resist layer 201, the wiring layer 202, the insulation layer 203,the wiring layer 204, the insulation layer 205, the core layer 207, theinsulation layer 215, the wiring layer 214, the insulation layer 213,the wiring layer 212 and the solder resist layer 211 are disposed inthis order along the optical axis 22.

The insulation layer 203, the insulation layer 205, the insulation layer215 and the insulation layer 213 are resin layers, for example. Therespective thicknesses of the insulation layer 203, the insulation layer205, the insulation layer 215 and the insulation layer 213 are 20 μm to50 μm. Note that the thicknesses are lengths in the z-axis direction.

The wiring layer 202, the wiring layer 204, the wiring layer 214 and thewiring layer 212 include wiring patterns. An alloy of nickel and iron(for example, 42 alloy or 56 alloy), copper, aluminum or the like can beused as materials of the wiring layer 202, the wiring layer 204, thewiring layer 214 and the wiring layer 212. The respective thicknesses ofwiring patterns that the wiring layer 202, the wiring layer 204, thewiring layer 214 and the wiring layer 212 have are approximately 10 μmto 50 μm.

The core layer 207 is formed with metal. When the core layer 207 is tobe formed with metal, an alloy of nickel and iron (for example, 42 alloyor 56 Alloy), copper, aluminum or the like may be used as a material ofthe core layer 207, for example. The thickness of the core layer 207 islarger than the thickness of either wiring layer of the wiring layer202, the wiring layer 204, the wiring layer 214 and the wiring layer212. The thickness of the core layer 207 is larger than the thickness ofeither insulation layer of the insulation layer 203, the insulationlayer 205, the insulation layer 215 and the insulation layer 213.Specifically, the thickness of the core layer 207 is approximately 0.1mm to 0.8 mm. The rigidity of the core layer 207 is higher than therigidity of either wiring layer of the wiring layer 202, the wiringlayer 204, the wiring layer 214 and the wiring layer 212. The rigidityof the core layer 207 may be higher than the rigidity of the first layer121. The rigidity of the core layer 207 may be higher than the rigidityof the second layer 122.

Note that the core layer 207 may be formed with resin. When the corelayer 207 is to be formed with resin, the core layer 207 may be formedby using FR4 or a material having a modulus of elasticity higher thanthat of FR4, for example. When the core layer 207 is to be formed withresin, the core layer 207 is sandwiched by wiring layers in the z-axisdirection. For example, when the core layer 207 is to be formed withresin, the image-capturing chip 100, the solder resist layer 201, thewiring layer 202, the insulation layer 203, the wiring layer 204, thecore layer 207, the wiring layer 214, the insulation layer 213, thewiring layer 212 and the solder resist layer 211 may be disposed in thisorder along the optical axis 22. When two wiring layers are to beadditionally disposed, an additional insulation layer that contacts thewiring layer 204 and an additional wiring layer that contacts the corelayer 207 are disposed sequentially along the optical axis 22 andbetween the wiring layer 204 and the core layer 207, and an additionalwiring layer that contacts the core layer 207 and an additionalinsulation layer that contacts the wiring layer 214 are disposedsequentially along the optical axis 22 between the core layer 207 andthe wiring layer 214.

In this manner, the implementation substrate 120 is a multilayer coresubstrate having a metal core or a resin core. The thickness of theentire implementation substrate 120 may be approximately 0.3 mm to 1.0mm.

At least a portion of the wiring layer 202 is used for a wiring patternthat receives pixel signals output from the image-capturing chip 100 viathe bonding wires 110. The wiring layer 202 includes a bonding pad 240to which the bonding wires 110 are connected.

A wiring pattern included in the wiring layer 204 and a wiring patternincluded in the wiring layer 214 can be used for a ground line, a powersupply line or the like, for example.

The image-capturing chip 100 is implemented on the solder resist layer201. The image-capturing chip 100 is electrically connected to thebonding pad 240 by the bonding wires 110. The bonding pad 240 and thewiring layer 212 are electrically connected by vias 131 that penetratethe first layer 121 and the core layer 207. The vias 131 are covered byinsulators 132. Pixel signals output from the image-capturing chip 100are transmitted to the wiring layer 212 via the wiring layer 202 and thevias 131.

Electronic components 180 are provided on the solder resist layer 211.That is, the electronic components 180 are implemented in theimplementation substrate 120 and on a second main surface 112 oppositeto the first main surface 111 on which the image-capturing chip 100 isimplemented. The electronic components 180 include, for example, aconnector, a capacitor, a resistor, a regulator, a transistor and thelike. Some components of the electronic components 180 configure a powersupply circuit 410 described below. Some components of the electroniccomponents 180 configure a voltage variation suppression circuit 420described below. Some components of the electronic components 180configure a discharge circuit 430 described below.

For example, a flexible substrate is connected to a connector as acomponent among the electronic components 180. The connector as acomponent among the electronic components 180 is connected to the wiringlayer 212, and pixel signals transmitted to the wiring layer 212 aretransmitted to an external electronic circuit such as the ASIC 52 viathe connector and the flexible substrate.

The electronic components 180 and the wiring layer 212 are electricallyconnected by lead members. The lead members for the electroniccomponents 180 are fixed to the wiring layer 212 by solder or the like.A portion of the wiring layer 212 is exposed to the outside throughopenings formed in the solder resist layer 211, and provides anelectrode such as a land.

The image-capturing chip 100 is implemented on the implementationsubstrate 120 by COB (chip-on-board). The image-capturing chip 100 isimplemented by adhering to the implementation substrate 120 for examplethrough an adhering portion 210. Specifically, the image-capturing chip100 adheres to the solder resist layer 201 of the implementationsubstrate 120 through the adhering portion 210. The adhering portion 210is formed for example by an adhesive. Specifically, the adhering portion210 is formed by thermal curing of a thermocurable adhesive. Theimage-capturing chip 100 is implemented on the implementation substrate120 by being subjected to an image-capturing chip implementing step.When implementing the image-capturing chip 100 on the implementationsubstrate 120 at the image-capturing chip implementing step, theimplementation substrate 120 is heated. The image-capturing chip 100 isimplemented on the heated implementation substrate 120 bythermocompression bonding.

The bonding wires 110 are implemented on the image-capturing chip 100and the bonding pad 240. The bonding wires 110 electrically connect theimage-capturing chip 100 and the bonding pad 240 by being subjected tothe wire bonding step (bonding wire implementing step). When the bondingwires 110 are implemented on the bonding pad 240 at the wire bondingstep, the bonding pad 240 is heated, and the bonding wires 110 areimplemented on the heated bonding pad 240 by thermocompression bonding.At the wire bonding step, the bonding wires 110 may be implemented onthe bonding pad 240 by ultrasonic compression bonding.

The frame 140 adheres to the implementation substrate 120 through anadhering portion 220. Specifically, the frame 140 adheres to the solderresist layer 201 of the implementation substrate 120 through theadhering portion 220. The adhering portion 220 is formed for example byan adhesive. Specifically, the adhering portion 220 is formed by thermalcuring of a thermocurable adhesive. The adhering portion 220 is formedby thermal curing of a thermocurable adhesive. At a frame implementingstep, the frame 140 is implemented on the implementation substrate 120.When the frame 140 is implemented on the implementation substrate 120 atthe frame implementing step, the frame 140 is heated, and the frame 140is implemented on the heated implementation substrate 120 bythermocompression bonding.

In this manner, at the steps of implementing the image-capturing chip100, the bonding wires 110 and the frame 140, heat is applied to theimage-capturing chip 100. That is, at the step of manufacturing theimage-capturing unit 40, heat is applied to the image-capturing chip100. The image-capturing unit 40 that has been manufactured by beingsubjected to the manufacturing step is subjected to an inspectionincluding measurement of a leakage current of the image-capturing chip100, at the step of inspecting the image-capturing unit 40.

The frame 140 has a first surface 141, a second surface 142, a thirdsurface 143, a fourth surface 144, a fifth surface 145 and a sixthsurface 146. The sixth surface 146 forms the opening portion 138. Thesixth surface 146 forms an inner wall surface of the frame 140. Theopening portion 138 is formed at a central portion on the xy plane, forexample.

The first surface 141 is a surface that adheres to the cover glass 160through an adhering portion 230. The first surface 141 is a surface thatcontacts an end portion of the sixth surface 146. The first surface 141is formed along the outer edge of the sixth surface 146. The firstsurface 141 is a surface that is approximately parallel with the xyplane.

The second surface 142 is a surface that contacts an end portion of thefirst surface 141. The second surface 142 is a surface formed along theouter edge of the first surface 141. The second surface 142 has asurface that is approximately parallel with the yz plane, and a surfacethat is approximately parallel with the xz plane.

The third surface 143 is a surface that contacts an end portion of thesecond surface 142. The third surface 143 is a surface that isapproximately parallel with the xy plane, and a surface that isapproximately parallel with the first surface 141.

The fourth surface 144 is a surface that contacts an end portion of thethird surface 143. The fourth surface 144 is a surface formed along theouter edge of the third surface 143. The fourth surface 144 has asurface that is approximately parallel with the yz plane, and a surfacethat is approximately parallel with the xz plane.

The fifth surface 145 is a surface that contacts an end portion of thefourth surface 144. The fifth surface 145 is a surface formed along theouter edge of the fourth surface 144. The fifth surface 145 is a surfacethat is approximately parallel with the xy plane. The fifth surface 145is a surface that is approximately parallel with the first surface 141and the third surface 143. The fifth surface 145 is a surface thatadheres to the solder resist layer 201 of the implementation substrate120 through the adhering portion 220. The fifth surface 145 faces theadhering portion 220. The fifth surface 145 is a surface that contactsan end portion of the sixth surface 146. The fifth surface 145 is formedalong the outer edge of the sixth surface 146.

The frame 140 has step portions formed by the first surface 141, thesecond surface 142 and the third surface 143. The frame 140 has a mounthole 148 as a mount portion. The frame 140 has three mount holes 148,for example. All the three mount holes 148 are holes that penetrate fromthe third surface 143 to the fifth surface 145. All the three mountholes 148 are utilized for mounting the image-capturing unit 40 onanother structure such as the mirror box 60.

The frame 140 is fixed to a bracket 150 for example by being screwedwith screws 149 via the three mount holes 148. The bracket 150 is fixedto the mirror box 60 for example by being screwed. Thus, theimage-capturing unit 40 is fixed to the mirror box 60.

When the frame 140 and the bracket 150 are screwed by the screws 149which are made of, for example, metal with the use of the mount holes148, a heat transfer path for allowing heat generated when theimage-capturing chip 100 is in operation to be released toward themirror box 60 via the screws 149 can be formed.

The frame 140 has positioning holes 147. The frame 140 has twopositioning holes 147, for example. All the two positioning holes 147are holes that penetrate from the third surface 143 to the fifth surface145. All the positioning holes 147 are utilized for positioning theimage-capturing unit 40 relative to the image-capturing unit 40. Amongthe two positioning holes 147, one positioning hole is formed as afitting hole, and the other positioning hole 147 is formed as a longhole.

The frame 140 is positioned relative to the bracket 150 with the use ofthe two positioning holes 147. For example, by two positioning pinsprovided to the bracket 150 being inserted to the two positioning holes147, the frame 140 and the bracket 150 are positioned. The frame 140 isfixed to the bracket 150 in a state where the frame 140 is positionedrelative to the bracket 150. Thus, the image-capturing unit 40 is fixedto the mirror box 60 in a state where the image-capturing unit 40 ispositioned relative to the mirror box 60. Note that the frame 140 andthe bracket 150 may be fixed to another structure other than the mirrorbox 60.

Note that the image-capturing unit 40 may be fixed to the mirror box 60not via the bracket 150. The image-capturing unit 40 may be fixed to themirror box 60 for example by being screwed via the three mount holes148.

The cover glass 160 is used for sealing the image-capturing chip 100.The cover glass 160 is fixed to the frame 140 so as to cover the openingportion 138 of the frame 140. Together with the frame 140 and theimplementation substrate 120, the cover glass 160 makes the openingportion 138 a sealed space.

The cover glass 160 adheres to the frame 140 through the adheringportion 230. The adhering portion 230 is formed by an adhesive.Specifically, the adhering portion 220 is formed by curing aphotocurable adhesive. For example, the adhering portion 230 is formedby curing a ultraviolet ray-curable adhesive with a ultraviolet ray. Asa material of the cover glass 160, borosilicate glass, quartz glass,non-alkali glass, heat resistant glass or the like can be used. Thecover glass 160 is light-transmissive. The thickness of the cover glass160 is 0.5 mm to 0.8 mm.

The cover glass 160 is fixed to the frame 140 after the image-capturingchip 100, the bonding wires 110 and the frame 140 are implemented on theimplementation substrate 120. Because the cover glass 160 islight-transmissive, the cover glass 160 and the frame 140 can adhere toeach other through a photocurable adhesive. Note that the cover glass160 is one example of a light-transmissive member. Other than glass,crystal or the like can be used as a light-transmissive member.

In this manner, a sealed space is formed by the implementation substrate120, the frame 140 and the cover glass 160. The image-capturing chip 100is arranged in the sealed space formed by the implementation substrate120, the frame 140 and the cover glass 160. Thereby, the image-capturingchip 100 becomes less likely to be influenced by the externalenvironment. For example, the image-capturing chip 100 becomes lesslikely to be influenced by moisture content existing outside the sealedspace. For this reason, degradation of the image-capturing chip 100 canbe prevented.

FIG. 4 is a circuit diagram schematically showing an electrical powersupply circuit 490 in a first implementation example. The electricalpower supply circuit 490 has a power supply line 400, a ground line 480,a power supply circuit 410, a voltage variation suppression circuit 420,a discharge circuit 430, a FET 440, a control line 445, a control land444, a pull down resistor 446, a measurement resistor 450, a measurementland 451, a measurement land 452, a measurement line 453 and ameasurement line 454.

The power supply circuit 410, the voltage variation suppression circuit420, the discharge circuit 430, the FET 440, the control land 444, thepull down resistor 446, the measurement resistor 450, the measurementland 451 and the measurement land 452 are included as a portion of theelectronic component 180. The power supply line 400, the ground line480, the control line 445, the measurement line 453 and the measurementline 454 are formed by wiring patterns included in the wiring layer 212.

The power supply line 400 is formed by, among the wiring patternsincluded in the wiring layer 212, a power supply pattern that feedselectrical power to the image-capturing chip 100. The ground line 480 isformed by, among the wiring patterns included in the wiring layer 214, aground pattern that provides ground potential of the image-capturingunit 40.

The power supply circuit 410 outputs electrical power to be fed to theimage-capturing chip 100. The electrical power output by the powersupply circuit 410 is fed to the image-capturing chip 100 through thepower supply line 400.

The power supply circuit 410 has a regulator 416 and a capacitor 419.The regulator 416 is one example of a voltage output circuit thatoutputs constant voltage. As one example, the regulator 416 is a seriesregulator. The regulator 416 has a control terminal 411, a GND terminal412, a noise pass pin 413, an output terminal 414 and an input terminal415.

A power supply voltage V+ is applied to the input terminal 415. Thepower supply voltage V+ is provided from a power supply unit that thecamera 10 comprises. The power supply unit is generated by usingelectrical power accumulated in a battery fit to the camera 10. Voltageto control operation of the regulator 416 is applied to the controlterminal 411. Voltage which is the same as voltage applied to the inputterminal 415 is applied to the control terminal 411.

The GND terminal 412 is electrically connected to the ground line 480.For example, the GND terminal 412 is electrically connected to theground line 480 by solder.

The noise pass pin 413 is electrically connected to one end of thecapacitor 419. The other end of the capacitor 419 is electricallyconnected to the ground line 480. By connecting the capacitor to thenoise pass pin 413, temporal variation in output voltage output from theoutput terminal 414 is suppressed.

When the value of a voltage applied to the control terminal 411 exceedsa predetermined value, the regulator 416 outputs constant voltage fromthe output terminal 414 by using electrical power fed from the inputterminal 415. Specifically, the regulator 416 outputs constant voltagefrom the output terminal 414 by lowering and stabilizing voltage appliedto the input terminal 415.

The output terminal 414 is electrically connected to the power supplyline 400. The output terminal 414 is electrically connected to the powersupply line 400 that the image-capturing unit 40 has. For example, theoutput terminal 414 is electrically connected to the power supply line400 by solder. The power supply line 400 forms a feed line from theoutput terminal 414 to the bonding pad 240 connected to a feed terminalof the image-capturing chip 100.

The voltage variation suppression circuit 420 is implemented on theimplementation substrate 120 in a state where the voltage variationsuppression circuit 420 is electrically connected to the power supplyline 400, and suppresses temporal variation in voltage output by thepower supply circuit 410. The voltage variation suppression circuit 420has a first capacitor 421, a second capacitor 422 and a resistor 423.

One end of the first capacitor 421 is electrically connected to thepower supply line 400, and the other end of the first capacitor 421 iselectrically connected to the ground line 480. One end of the secondcapacitor 422 is electrically connected to the power supply line 400,and the other end of the second capacitor 422 is electrically connectedto the ground line 480. One end of the resistor 423 is electricallyconnected to the power supply line 400, and the other end of theresistor 423 is electrically connected to the ground line 480.

The first capacitor 421 suppresses relatively high frequency voltagevariation. The first capacitor 421 is a ceramic condenser, for example.The second capacitor 422 suppresses relatively low frequency voltagevariation. The second capacitor 422 is an electrolytic condenser, forexample.

The second capacitor 422 can absorb relatively large voltage variation.The capacity of the second capacitor 422 is higher than the capacity ofthe first capacitor 421. The capacity of the second capacitor 422 may beabout ten times as large as the capacity of the first capacitor 421. Thecapacity of the first capacitor 421 may be within the range of 0.1 to 10μF. The capacity of the second capacitor 422 may be within the range of10 to 560 μF. The resistance value of the resistor 423 may be 1 kΩ orhigher, for example. Note that the configuration of the voltagevariation suppression circuit 420 may have only either one of the firstcapacitor 421 and the second capacitor 422. The configuration of thevoltage variation suppression circuit 420 may not have the resistor 423.

The discharge circuit 430 is implemented on the implementation substrate120 in a state where discharge circuit 430 is electrically connected tothe power supply line 400, and discharges electrical charges accumulatedin the image-capturing chip 100. The discharge circuit 430 has aresistor 431 and a FET 432. The FET 432 is an N-channel MOSFET. The FET432 is one example of a switch that controls discharging of residualelectric charges in the inner circuit of the image-capturing chip 100.One end of the resistor 431 is electrically connected to the powersupply line 400, and the other end of the resistor 431 is electricallyconnected to a drain terminal 433 of the FET 432. The resistance valueof the resistor 431 is 100Ω, for example. The resistance value of theresistor 431 may be within the range of 20Ω to 500Ω, for example. Asource terminal 434 of the FET 432 is electrically connected to theground line 480. Note that when performing only operation that do notleave residual electric charges in the inner circuit of theimage-capturing chip 100, the discharge circuit 430 may not beimplemented on the implementation substrate 120.

Control voltage to control operation of the FET 432 is applied to a gateterminal 435 of the FET 432. When a predetermined positive voltage isapplied to the gate terminal 435, the drain terminal 433 and sourceterminal 434 of the FET 432 become conductive. In this case, the powersupply line 400 is electrically connected to the ground line 480 via theresistor 431. Thereby, residual electric charges in the inner circuit ofthe regulator 416 are discharged to the ground line 480 through thepower supply line 400 and the discharge circuit 430. Also, residualelectric charges accumulated in the first capacitor 421 and secondcapacitor 422 of the voltage variation suppression circuit 420 aredischarged to the ground line 480 through the power supply line 400 andthe discharge circuit 430. Also, when the source-drain of the FET 440described below is conductive, residual electric charges in the innercircuit of the image-capturing chip 100 are discharged to the groundline 480 through the power supply line 400 and the discharge circuit430.

The FET 440 is provided to the power supply line 400. The FET 440 is aP-channel MOSFET. The FET 440 is one example of an adjusting unit thatadjusts electrical current that flows from the power supply circuit 410to the image-capturing chip 100 so that the electrical current becomessmaller when a leakage current of the image-capturing chip 100 is beingmeasured, as compared with when a leakage current of the image-capturingchip 100 is not being measured. The FET 440 makes an electricalresistance between the power supply circuit 410 and the image-capturingchip 100 higher when a leakage current of the image-capturing chip 100is being measured, as compared with when a leakage current of theimage-capturing chip 100 is not being measured.

A source terminal 441 of the FET 440 is electrically connected to thepower supply circuit 410 side in the power supply line 400. A drainterminal 442 of the FET 440 is electrically connected to theimage-capturing chip 100 side in the power supply line 400. When thesource terminal 441 and drain terminal 442 of the FET 440 areconductive, the power supply circuit 410 and the image-capturing chip100 are electrically connected, and it becomes possible to feedelectrical power from the power supply circuit 410 to theimage-capturing chip 100 via the power supply line 400. In this case,the passage of electricity between the source-drain of the FET 440, andthe power supply line 400 form a feed line from the output terminal 414of the regulator 416 to the bonding pad 240 connected to the feedterminal of the image-capturing chip 100.

The control land 444 is electrically connected to a gate terminal 443 ofthe FET 440 via the control line 445. The gate terminal 443 iselectrically connected to the ground line 480 via the pull down resistor446. When the gate terminal 443 is electrically open, the sourceterminal 441 and drain terminal 442 of the FET 440 become conductive.

On the other hand, when a predetermined positive voltage is beingapplied to the control land 444, the source terminal 441 and drainterminal 442 of the FET 440 become non-conductive. In this case,electrical connection between the power supply circuit 410 and theimage-capturing chip 100 and via the power supply line 400 isdisconnected.

The measurement resistor 450 is connected to the power supply line 400in parallel with the FET 440. The measurement resistor 450 is used formeasuring a leakage current of the image-capturing chip 100. Themeasurement land 451 is electrically connected to one end of themeasurement resistor 450. The measurement land 452 is electricallyconnected to the other end of the measurement resistor 450. The one endof the measurement resistor 450 is electrically connected to themeasurement land 451 via the measurement line 453. The other end of themeasurement resistor 450 is electrically connected to the measurementland 452 via the measurement line 454.

With the use of the FET 440, a state where the one end and the other endof the measurement resistor 450 are electrically short-circuited, and astate where they are not electrically short-circuited are switched.

For example, when the control land 444 is electrically floating, thesource terminal 441 and drain terminal 442 of the FET 440 becomeconductive, and the one end and the other end of the measurementresistor 450 become electrically short-circuited. On the other hand,when a predetermined positive voltage is being applied to the controlland 444, the source terminal 441 and drain terminal 442 of the FET 440become non-conductive, and the one end and the other end of themeasurement resistor 450 become electrically not short-circuited.

Measurement of a leakage current of the image-capturing chip 100 isperformed while the source terminal 441 and drain terminal 442 of theFET 440 are non-conductive. That is, measurement of a leakage current isperformed in a state where a predetermined positive voltage is appliedto the control land 444. In this state, the image-capturing chip 100 andthe power supply circuit 410 are not electrically connected via thepower supply line 400, and the image-capturing chip 100 and the powersupply circuit 410 are connected via the measurement resistor 450.Thereby, as compared with when the image-capturing chip 100 and thepower supply circuit 410 are electrically connected via the power supplyline 400, a leakage current of the image-capturing chip 100 can bemeasured more precisely.

In the power supply line 400, the FET 440 is provided on the powersupply circuit 410 side relative to the measurement land 451, and when aleakage current of the image-capturing chip 100 is measured,electrically disconnects the measurement land 451 and the power supplycircuit 410.

Note that in the power supply line 400, the FET 440 is provided on theimage-capturing chip 100 side relative to a part at which the dischargecircuit 430 is connected. Accordingly, the discharge circuit 430 iselectrically disconnected from the image-capturing chip 100 by the FET440 when a leakage current of the image-capturing chip 100 is measured.For this reason, as compared with when the discharge circuit 430 isprovided on the image-capturing chip 100 side relative to the FET 440, aleakage current can be measured more precisely.

In the power supply line 400, the FET 440 is provided on theimage-capturing chip 100 side relative to a part at which the voltagevariation suppression circuit 420 is connected. Accordingly, the voltagevariation suppression circuit 420 is electrically disconnected from theimage-capturing chip 100 by the FET 440 when a leakage current of theimage-capturing chip 100 is measured. For this reason, as compared withwhen the voltage variation suppression circuit 420 is provided on theimage-capturing chip 100 side relative to the FET 440, a leakage currentcan be measured more precisely.

The measurement resistor 450 has a resistance value pre-designed basedon precision of measuring a leakage current of the image-capturing chip100. For example, the resistance value of the measurement resistor 450is 1 kΩ or higher. The resistance value of the measurement resistor 450may be 10 kΩ or higher. The resistance value of the measurement resistor450 is preferably 100 kΩ or higher. The resistance value of themeasurement resistor 450 may be 1 MΩ or lower. The resistance value ofthe measurement resistor 450 is desirably sufficiently lower than thesource-drain resistance in a case where the source terminal 441 anddrain terminal 442 of the FET 440 are non-conductive.

FIG. 5 schematically shows a leakage current measuring system 590. Theleakage current measuring system 590 comprises a control unit 500, avoltage measuring unit 510 and the image-capturing unit 40.

In order to measure a leakage current of the image-capturing chip 100,the control unit 500 brings about a non-driving state where theimage-capturing chip 100 does not operate. Also, the control unit 500applies a positive voltage to the control land 444. Thereby, one end andthe other end of the measurement resistor 450 become electrically notshort-circuited. In this state, the control unit 500 causes theregulator 416 to operate by applying a power supply voltage to theregulator 416, and causes the voltage measuring unit 510 to measure avoltage between the measurement land 451 and the measurement land 452.The control unit 500 calculates a leakage current based on a voltagebetween the measurement land 451 and the measurement land 452 that ismeasured by the voltage measuring unit 510, and the resistance value ofthe measurement resistor 450.

The control unit 500 performs quality judgment of the image-capturingchip 100 based on the calculated current value of a leakage current. Forexample, the control unit 500 judges that the image-capturing chip 100is a non-conforming article when the calculated current value of aleakage current is higher than a predetermined value. The control unit500 judges that the image-capturing chip 100 is a conforming articlewhen the calculated current value of a leakage current is equal to orlower than a predetermined value.

Due to the electrical power supply circuit 490 according to the firstimplementation example, a leakage current of the image-capturing chip100 can be measured by using the regulator 416 as a current source ofthe leakage current. For this reason, a leakage current source needs notbe prepared separately.

FIG. 6 is a circuit diagram schematically showing an electrical powersupply circuit 690 in a second implementation example. Among componentsthat the electrical power supply circuit 690 has, the components thatare provided with the same reference numerals as those provided tocomponents that the electrical power supply circuit 490 explained withreference to FIG. 4 and FIG. 5 has have functions and configurationssimilar to corresponding components that the electrical power supplycircuit 490 has. Among components that the electrical power supplycircuit 690 has, explanation of the components corresponding tocomponents that the electrical power supply circuit 490 has may beomitted. Among components that the electrical power supply circuit 690has, only differences of components from the corresponding componentsthat the electrical power supply circuit 490 has may be explained.

The electrical power supply circuit 690 has the power supply line 400,the ground line 480, the power supply circuit 410, the voltage variationsuppression circuit 420, the discharge circuit 430, the FET 440, thecontrol line 445, the control land 444, the pull down resistor 446, ameasurement land 651 and a measurement line 653.

The measurement land 651 corresponds to the measurement land 451. Themeasurement line 653 corresponds to the measurement line 453. For thisreason, the configuration of the electrical power supply circuit 690 isequivalent to the configuration obtained by excluding the measurementresistor 450, the measurement land 452 and the measurement line 454 fromthe configuration of the electrical power supply circuit 490.

Measurement of a leakage current of the image-capturing chip 100 isperformed in a state where the source terminal 441 and drain terminal442 of the FET 440 are made non-conductive, and the power supply circuit410 and the image-capturing chip 100 are electrically disconnected.Measurement of a leakage current of the image-capturing chip 100 isperformed by connecting a current source to the measurement land 651.

In this manner, in the power supply line 400, the FET 440 is provided onthe power supply circuit 410 side relative to the measurement land 651.Then, when a leakage current of the image-capturing chip 100 ismeasured, the FET 440 electrically disconnects the measurement land 651and the power supply circuit 410.

FIG. 7 schematically shows a leakage current measuring system 790. Theleakage current measuring system 790 comprises a control unit 700, acurrent measuring unit 710, a current source 720 and the image-capturingunit 40.

In order to measure a leakage current of the image-capturing chip 100,the control unit 700 brings about a non-driving state where theimage-capturing chip 100 does not operate. Also, the control unit 700applies a positive voltage to the control land 444. Thereby, the powersupply circuit 410 and the image-capturing chip 100 become electricallydisconnected. In this state, the control unit 700 controls the currentsource 720 to bring about a state where an electrical current can be fedfrom the current source 720 to the image-capturing chip 100 via themeasurement land 451, and causes the current measuring unit 710 tomeasure the current value of an electrical current flowing from thecurrent source 720 into the measurement land 451. The control unit 700calculates the current value measured by the current measuring unit 710as the current value of a leakage current.

The control unit 700 performs quality judgment of the image-capturingchip 100 based on the calculated current value of a leakage current. Forexample, the control unit 700 judges that the image-capturing chip 100is a non-conforming article when the calculated current value of aleakage current is higher than a predetermined value. The control unit700 judges that the image-capturing chip 100 is a conforming articlewhen the calculated current value of a leakage current is equal to orlower than a predetermined value.

After measuring the leakage current, the control unit 700 stopsapplication of a positive voltage to the control land 444, andelectrically opens the control land 444. Thereby, the power supplycircuit 410 and the image-capturing chip 100 are electrically connected,and it becomes possible to feed electrical power from the power supplycircuit 410 to the image-capturing chip 100 via the power supply line400.

As explained with reference to FIG. 4 to FIG. 7, depending on a voltageapplied to the control land 444, the FET 440 switches between a statewhere the power supply circuit 410 and the image-capturing chip 100 areelectrically disconnected, and a state where they are electricallyconnected. The FET 440 is one example of a switch unit that switchesbetween a state where the power supply circuit 410 and theimage-capturing chip 100 are electrically disconnected, and a statewhere the power supply circuit 410 and the image-capturing chip 100 areelectrically connected. Also, the control land 444 is one example of anelectrode for control for feeding, to the FET 440, electrical signals tocontrol switching operation by the FET 440.

FIG. 8 is a circuit diagram schematically showing an electrical powersupply circuit 890 in a third implementation example. Among componentsthat the electrical power supply circuit 890 has, the components thatare provided with the same reference numerals as those provided tocomponents that the electrical power supply circuits 490 explained withreference to FIG. 4 and FIG. 5 has have functions and configurationssimilar to corresponding components that the electrical power supplycircuits 490 has. Among components that the electrical power supplycircuit 890 has, explanation of the components corresponding tocomponents that the electrical power supply circuit 490 has may beomitted. Among components that the electrical power supply circuit 890has, only differences of components from the corresponding componentsthat the electrical power supply circuit 490 has may be explained.

The electrical power supply circuit 890 has the power supply line 400,the ground line 480, the power supply circuit 410, the voltage variationsuppression circuit 420, the discharge circuit 430, a measurement land851 and a measurement line 853.

The measurement land 851 corresponds to the measurement land 451. Themeasurement line 853 corresponds to the measurement line 453. Aconnection land 841 is provided at a position corresponding to thesource terminal 441 of the FET 440. A connection land 842 corresponds tothe drain terminal 442 of the FET 440. For this reason, theconfiguration of the electrical power supply circuit 890 is equivalentto the configuration obtained by excluding the measurement resistor 450,the measurement land 452 and the measurement line 454 from theconfiguration of the electrical power supply circuit 490, and providingthe connection land 841 and the connection land 842 instead of the FET440, the control line 445, the control land 444 and the pull downresistor 446.

The connection land 841 and the connection land 842 are provided spacedapart from each other. The connection land 841 and the connection land842 are provided close to each other. The connection land 841 and theconnection land 842 are provided separated from each other by a distancethat can be connected by solder after implementing the electrical powersupply circuit 890 on the implementation substrate 120.

Measurement of a leakage current of the image-capturing chip 100 isperformed in a state where the connection land 841 and the connectionland 842 are not electrically connected by solder. Measurement of aleakage current of the image-capturing chip 100 is performed byconnecting a current source to the measurement land 651. After measuringa leakage current, if the image-capturing chip 100 is determined as aconforming article, the connection land 841 and the connection land 842are connected by solder. Thereby, a feed line from the output terminal414 of the regulator 416 to the bonding pad 240 connected to the feedterminal of the image-capturing chip 100 is formed by the power supplyline 400, the connection land 841, solder connection between theconnection land 841 and the connection land 842 and the connection land842. That is, the power supply circuit 410 and the image-capturing chip100 are electrically connected.

FIGS. 9A and 9B schematically show an implementation example of theconnection land 841 and the connection land 842. FIG. 9A schematicallyshows a state before measuring a leakage current and at the time ofmeasuring a leakage current. The connection land 841 and the connectionland 842 are formed to be exposed through an opening 940 of the solderresist layer 211.

The outer edge of the connection land 841 is approximately semicircular.The outer edge of the connection land 842 is approximately semicircular.A straight line portion 901 at the outer edge of the connection land 841faces a straight line portion 902 at the outer edge of the connectionland 842. The straight line portion 901 at the outer edge of theconnection land 841 and the straight line portion 902 at the outer edgeof the connection land 842 are formed to be spaced apart from eachother. The power supply line 400 extends from the side opposite to thestraight line portion 901 at the outer edge of the connection land 841.Also, the power supply line 400 extends from the side opposite to thestraight line portion 902 at the outer edge of the connection land 842.

FIG. 9B schematically shows a state where a conductive bridge 950 isformed between the connection land 841 and the connection land 842 aftermeasuring a leakage current. After measuring a leakage current, theconductive bridge 950 is formed between the connection land 841 and theconnection land 842 by solder. Thereby, the connection land 841 and theconnection land 842 are electrically connected by the conductive bridge950.

The connection land 842 is one example of an electrode provided, in thepower supply line 400, on the power supply circuit 410 side relative tothe measurement land 851. The connection land 841 is one example of anelectrode that is implemented to be spaced apart from the connectionland 842 and is provided between the connection land 842 and the powersupply circuit 410 in the power supply line 400. As explained above, aleakage current of the image-capturing chip 100 is measured by using themeasurement land 851 in a state where the connection land 841 and theconnection land 842 are electrically insulated. The connection land 841and the connection land 842 are electrically connected by a conductorafter measuring the leakage current.

As explained above, in the power supply line 400, the connection land841 and the connection land 842 are provided on the power supply circuit410 side relative to the measurement land 851. When measuring a leakagecurrent of the image-capturing chip 100, the measurement land 851 andthe power supply circuit 410 are electrically disconnected by theconnection land 841 and the connection land 842.

FIGS. 10A and 10B schematically show another implementation example ofthe connection land 841 and the connection land 842. A connection land1041 corresponds to the connection land 841, and a connection land 1042corresponds to the connection land 842. FIG. 10A schematically shows astate before measuring a leakage current and at the time of measuring aleakage current. The connection land 1041 and the connection land 1042are formed to be exposed through an opening 1040 of the solder resistlayer 211.

The connection land 1041 has a region 1011 that has an edge connected tothe power supply line 400, and a protruding portion 1012 that protrudesfrom the region 1011 toward the connection land 1042.

The connection land 1042 has a region 1021 that has an edge connected tothe power supply line 400, and a protruding portion 1022 that protrudesfrom the region 1021 toward the connection land 1041.

The protruding portion 1012 of the connection land 1041 and the region1021 of the connection land 1042 have edge portions that face eachother. The edge portions at which the protruding portion 1012 and theregion 1021 face each other are approximately perpendicular to thedirection in which the power supply line 400 extends. Also, theprotruding portion 1022 of the connection land 1042 and the region 1011of the connection land 1041 have edge portions that face each other. Theedge portions at which the protruding portion 1022 and the region 1011face each other are approximately perpendicular to the direction inwhich the power supply line 400 extends.

Also, the protruding portion 1012 of the connection land 1041 and theprotruding portion 1022 of the connection land 1042 have edge portionsthat face each other. The edge portions at which the protruding portion1012 and the protruding portion 1022 face each other are approximatelyparallel to the direction in which the power supply line 400 extends.Thereby, the lengths of the edge portions at which the connection land1041 and the connection land 1042 face each other can be made long.

FIG. 10B schematically shows a state where a conductive bridge 1050 isformed between the connection land 1041 and the connection land 1042after measuring a leakage current. After measuring a leakage current,the conductive bridge 1050 is formed between the connection land 1041and the connection land 1042 by solder. Thereby, the connection land1041 and the connection land 1042 are electrically connected by theconductive bridge 1050.

The connection land 1042 is one example of an electrode provided, in thepower supply line 400, on the power supply circuit 410 side relative tothe measurement land 851. The connection land 1041 is one example of anelectrode that is implemented to be spaced apart from the connectionland 1042 and is provided between the connection land 1042 and the powersupply circuit 410 in the power supply line 400. As explained above, aleakage current of the image-capturing chip 100 is measured by using themeasurement land 851 in a state where the connection land 1041 and theconnection land 1042 are electrically insulated. The connection land1041 and the connection land 1042 are electrically connected by aconductor after measuring the leakage current.

As explained above, in the power supply line 400, the connection land1041 and the connection land 1042 are provided on the power supplycircuit 410 side relative to the measurement land 851. When measuring aleakage current of the image-capturing chip 100, the measurement land851 and the power supply circuit 410 are electrically disconnected bythe connection land 1041 and the connection land 1042.

FIG. 11 schematically shows a leakage current measuring system 1190according to the third implementation example. The leakage currentmeasuring system 1190 comprises a control unit 1100, a current measuringunit 1110, a current source 1120 and the image-capturing unit 40. Here,operation of the leakage current measuring system 1190 is explained byusing the implementation example of the connection land 841 and theconnection land 842 that is explained with reference to FIGS. 9A and 9Bor the like.

In order to measure a leakage current of the image-capturing chip 100,the control unit 1100 brings about a non-driving state where theimage-capturing chip 100 does not operate. Also, in a state where theconnection land 841 and the connection land 842 are not electricallyconnected, the control unit 1100 controls the current source 1120 tobring about a state where an electrical current can be fed from thecurrent source 1120 to the image-capturing chip 100 via the measurementland 851, and causes the current measuring unit 1110 to measure thecurrent value of an electrical current flowing from the current source1120 into the measurement land 851. The control unit 1100 calculates thecurrent value measured by the current measuring unit 1110 as the currentvalue of a leakage current.

The control unit 1100 performs quality judgment of the image-capturingchip 100 based on the calculated current value of a leakage current. Forexample, the control unit 1100 judges that the image-capturing chip 100is a non-conforming article when the calculated current value of aleakage current is higher than a predetermined value. The control unit1100 judges that the image-capturing chip 100 is a conforming articlewhen the calculated current value of a leakage current is equal to orlower than a predetermined value.

After measuring the leakage current, the conductive bridge 950 is formedbetween the connection land 841 and the connection land 842 to connectthe connection land 841 and the connection land 842. Thereby, the powersupply circuit 410 and the image-capturing chip 100 are electricallyconnected, and it becomes possible to feed electrical power from thepower supply circuit 410 to the image-capturing chip 100 via the powersupply line 400.

Operation similar to the operation of the leakage current measuringsystem 1190 explained with reference to FIG. 11 can be applied to theimplementation example of the connection land 1041 and the connectionland 1042 explained with reference to FIGS. 10A and 10B, etc. For thisreason, detailed explanation about the leakage current measuring systemaccording to the implementation example of the connection land 1041 andthe connection land 1042 is omitted.

As explained with reference to FIG. 4 to FIG. 7, when a leakage currentof the image-capturing chip 100 is measured, the FET 440 functions as adisconnecting unit that is electrically disconnecting the power supplycircuit 410 and the image-capturing chip 100. Also, the measurement land451, the measurement land 651 and the measurement land 851 areimplemented on the implementation substrate 120 in a state where theyare electrically connected to the power supply line 400, and are usedfor measuring a leakage current of the image-capturing chip 100.

In the explanation of the embodiments explained above, the control land444, the measurement land 451, the measurement land 452, the connectionland 841, the connection land 842, the connection land 1041 and theconnection land 1042 are examples of electrodes that can be accessedfrom the outside after implementing the image-capturing unit 40. Thecontrol land 444, the measurement land 451, the measurement land 452,the connection land 841, the connection land 842, the connection land1041 and the connection land 1042 are not limited to lands, but can beapplied to various implementation forms.

The camera 10 including the lens unit 20 and the camera body 30 isexplained as one example of an image-capturing apparatus. However, theimage-capturing apparatus does not have to include the lens unit 20. Forexample, the camera body 30 is one example of an image-capturingapparatus. Also, the image-capturing apparatus is a concept including alens-non-replaceable image-capturing apparatus, other than alens-replaceable image-capturing apparatus such as a single-lens reflexcamera.

While the embodiments of the present invention have been described, thetechnical scope of the invention is not limited to the above describedembodiments. It is apparent to persons skilled in the art that variousalterations and improvements can be added to the above-describedembodiments. It is also apparent from the scope of the claims that theembodiments added with such alterations or improvements can be includedin the technical scope of the invention.

The operations, procedures, steps, and stages of each process performedby an apparatus, system, program, and method shown in the claims,embodiments, or diagrams can be performed in any order as long as theorder is not indicated by “prior to,” “before,” or the like and as longas the output from a previous process is not used in a later process.Even if the process flow is described using phrases such as “first” or“next” in the claims, embodiments, or diagrams, it does not necessarilymean that the process must be performed in this order.

EXPLANATION OF REFERENCE SYMBOLS

-   -   10: camera; 20: lens unit; 22: optical axis; 24: lens mount; 26:        body mount; 30: camera body; 31: mirror unit; 32: main mirror;        33: sub mirror; 38: shutter unit; 40: image-capturing unit; 51:        MPU; 52: ASIC; 60: mirror box; 62: substrate; 70: imaging        optical system; 72: focus detection sensor; 80: focus plate; 82:        pentaprism; 84: finder optical system; 86: finder window; 88:        display unit; 100: image-capturing chip; 101: image-capturing        region; 102: peripheral region; 110: wire 111: first main        surface; 112: second main surface; 120: implementation        substrate; 121: first layer; 122: second layer; 131: via; 132:        insulator; 138: opening portion; 140: frame; 141: first surface;        142: second surface; 143: third surface; 144: fourth surface;        145: fifth surface; 146: sixth surface; 147: positioning hole;        148: mount hole; 149: screw; 150: bracket; 160: cover glass;        180: electronic component; 201, 211: solder resist layer; 202,        204, 212, 214: wiring layer; 203, 205, 213, 215: insulation        layer; 207: core layer; 210, 220, 230: adhering portion; 240:        bonding pad; 400: power supply line; 410: power supply circuit;        411: control terminal; 412: GND terminal; 413: noise pass pin;        414: output terminal; 415: input terminal; 416: regulator; 419:        capacitor; 420: voltage variation suppression circuit; 421:        first capacitor; 422: second capacitor; 423: resistor; 430:        discharge circuit; 431: resistor; 432: FET; 433: drain terminal;        434: source terminal; 435: gate terminal; 440: FET; 441: source        terminal; 442: drain terminal; 443: gate terminal; 444: control        land; 445: control line; 446: pull down resistor; 450:        measurement resistor; 451: measurement land; 452: measurement        land; 453: measurement line; 454: measurement line; 480: ground        line; 490: electrical power supply circuit

What is claimed is:
 1. An image-capturing unit comprising: an image-capturing chip that captures an image of a subject; an implementation substrate on which the image-capturing chip is implemented; an electronic component that is provided to the implementation substrate, and is for driving the image-capturing chip; a wiring that connects the electronic component and the image-capturing chip; and an adjusting unit that is provided to the wiring, and adjusts an electrical current flowing from the electronic component to the image-capturing chip so that the electrical current becomes smaller when a leakage current of the image-capturing chip is being measured, as compared with when a leakage current of the image-capturing chip is not being measured.
 2. The image-capturing unit according to claim 1, wherein the image-capturing chip is arranged in a space formed by: a first surface of the implementation substrate; a frame that is arranged on the first surface, and surrounds at least a portion of the image-capturing chip; and a light-transmissive substrate arranged to face the image-capturing chip, and the adjusting unit is provided to a second surface that is opposite to the first surface in the implementation substrate.
 3. The image-capturing unit according to claim 1, further comprising a first electrode that is connected to the wiring, and is to be used when a leakage current of the image-capturing chip is being measured, wherein in the wiring, the adjusting unit is provided on the electronic component side relative to the first electrode.
 4. The image-capturing unit according to claim 3, further comprising: a resistor that is provided to the wiring, and is arranged to be connected in parallel with the adjusting unit; and a second electrode that is connected to the wiring, and is to be used when a leakage current of the image-capturing chip is being measured, wherein the first electrode is electrically connected to a first end portion of the resistor, and the second electrode is electrically connected to a second end portion of the resistor.
 5. The image-capturing unit according to claim 1, wherein the adjusting unit makes higher an electrical resistance between the electronic component and the image-capturing chip when a leakage current of the image-capturing chip is being measured, as compared with when a leakage current of the image-capturing chip is not being measured.
 6. The image-capturing unit according to claim 1, wherein the electronic component has a power supply circuit unit that outputs an electrical power to be fed to the image-capturing chip.
 7. The image-capturing unit according to claim 6, wherein the electronic component has a voltage variation suppression circuit that suppresses temporal variation in voltage output by the power supply circuit unit.
 8. The image-capturing unit according to claim 6, wherein the electronic component has a discharge circuit that discharges electrical charges accumulated in the image-capturing chip.
 9. An image-capturing apparatus comprising the image-capturing unit according to claim
 1. 10. An image-capturing unit comprising: an image-capturing chip that captures an image of a subject; an implementation substrate on which the image-capturing chip is implemented; a power supply circuit unit that is provided to the implementation substrate, and outputs an electrical power to be fed to the image-capturing chip; a feed line that feeds the electrical power from the power supply circuit unit to the image-capturing chip; and a restricting unit that is provided to the feed line, and restricts an electrical current flowing from the power supply circuit unit to the image-capturing chip when a leakage current of the image-capturing chip is measured.
 11. The image-capturing unit according to claim 10, wherein the image-capturing chip is arranged in a space formed by: a first surface of the implementation substrate; a frame that is arranged on the first surface, and surrounds at least a portion of the image-capturing chip; and a light-transmissive substrate arranged to face the image-capturing chip, and the restricting unit is provided to a second surface that is opposite to the first surface in the implementation substrate.
 12. The image-capturing unit according to claim 10, further comprising a first electrode that is connected to a wiring connecting an electronic component for driving the image-capturing chip and the image-capturing chip, and is to be used when a leakage current of the image-capturing chip is being measured, wherein in the wiring, the restricting unit is provided on the electronic component side relative to the first electrode.
 13. The image-capturing unit according to claim 12, further comprising: a resistor that is provided to the wiring, and is arranged to be connected in parallel with the restricting unit; and a second electrode that is connected to the wiring, and is to be used when a leakage current of the image-capturing chip is being measured, wherein the first electrode is electrically connected to a first end portion of the resistor, and the second electrode is electrically connected to a second end portion of the resistor.
 14. The image-capturing unit according to claim 10, wherein the restricting unit makes higher an electrical resistance between an electronic component for driving the image-capturing chip and the image-capturing chip when a leakage current of the image-capturing chip is being measured, as compared with when a leakage current of the image-capturing chip is not being measured.
 15. The image-capturing unit according to claim 10, further comprising an electronic component for driving the image-capturing chip, wherein the electronic component has a power supply circuit unit that outputs an electrical power to be fed to the image-capturing chip.
 16. The image-capturing unit according to claim 15, wherein the electronic component has a voltage variation suppression circuit that suppresses temporal variation in voltage output by the power supply circuit unit.
 17. The image-capturing unit according to claim 15, wherein the electronic component has a discharge circuit that discharges electrical charges accumulated in the image-capturing chip.
 18. An image-capturing apparatus comprising the image-capturing unit according to claim
 10. 19. A substrate comprising: an electronic component for driving an image-capturing chip; a wiring that connects the electronic component and the image-capturing chip; and a unit that is provided to the wiring, and adjusts or restricts an electrical current flowing from the electronic component to the image-capturing chip so that electrical current becomes smaller when a leakage current of the image-capturing chip is being measured, as compared with when a leakage current of the image-capturing chip is not being measured.
 20. The substrate according to claim 19, having a first surface on which the image-capturing chip is implemented, and a second surface that is opposite to the first surface, wherein the unit that adjusts or restricts the electrical current is provided to the second surface. 